Thermal Oxide Wafer




Thermal Oxide Wafer




Thermal Oxide Wafer




Thermal Oxide Wafer






SINCE 2002

Research & Innovation


Thermal oxide or silicon dioxide layer is formed on bare silicon surface at elevated temperature in the presence of an oxidant , the process is called thermal oxidation. Thermal oxide is normally grown in a horizontal tube furnace , at temperature range from 900°C ~ 1200°C , using either a "Wet" or "Dry" growth method . Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator . In most silicon- based devices, thermal oxide layer play an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics . SWI provides thermal oxide wafer in diameter from 2" to 12 " , we always choose prime grade and defect free silicon wafer as substrate for growing high uniformity thermal oxide layer to meet your specific requirements . Contact us for further information on price & delivery time .







10 nm thin
dry oxide wafer
90 nm
dry oxide wafer
285 nm
wet oxide wafer
300 nm
wet oxide wafer
1 um
wet oxide wafer
3 um thick
wet oxide wafer

Thermal Oxide Capability


Oxide thickness Oxidation Diameter Conductivity
Type
Orientation Resistivity range
10 nm oxide dry oxide 4 inch P type <100> 0.001 ~ 0.005
ohm-cm
90 nm oxide dry oxide 4 inch P type <100> 0.001 ~ 0.005
ohm-cm
100 nm oxide wet oxide 4 inch P type <100> 0.001 ~ 0.005
ohm-cm
285 nm oxide wet oxide 4 inch P type <100> 0.001 ~ 0.005
ohm-cm
300 nm oxide wet oxide 4 inch N type <100> 0.001 ~ 0.005
ohm-cm
1 um oxide wet oxide 4 inch P type <100> 1 ~ 20
ohm-cm
3 um oxide wet oxide 4 inch P type <100> 1 ~ 30
ohm-cm

Typically after thermal oxidation process , both front side and back side of silicon wafer have oxide layer . In case only one side oxide layer is required , we can remove back oxide and offer one side thermal oxide wafer for you .





Thermal Oxide Wafer Application


100 A Tunneling Gates
150 A ~ 500 A Gate Oxides
200 A ~ 500 A LOCOS Pad Oxide
2000 A ~ 5000 A Masking Oxides
3000 A ~ 10000 A Field Oxides

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Product Specification


Qxidation technique Wet oxidation or Dry oxidation                                                
Diameter Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12"
Oxide thickness 100 A ~ 6 um
Tolerance +/- 5%
Surface Single side or double sides oxide layer
Furnace Horizontal tube furnace
Gase Hydrogen and Oxygen gases
Temperature 900 C ° - 1200 C °
Refractive index 1.456

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Oxidation Capability


Oxide thickness range Oxidation technique Batch size       Within wafer
uniformity      
Wafer to wafer
uniformity 
Surface processed
100 Å ~ 500 Å dry oxide 25 pcs +/- 5% +/- 10% both sides
600 Å ~ 1000 Å dry oxide 25 pcs +/- 5% +/- 10% both sides
100 nm ~ 300 nm wet oxide 25 pcs +/- 3% +/- 5% both sides
400 nm ~ 1000 nm wet oxide 25 pcs +/- 3% +/- 5% both sides
1 um ~ 2 um wet oxide 25 pcs +/- 3% +/- 5% both sides
3 um ~ 4 um wet oxide 25 pcs +/- 3% +/- 5% both sides
5 um ~ 6 um wet oxide 25 pcs +/- 3% +/- 5% both sides

Typically after thermal oxidation process , both front side and back side of silicon wafer have oxide layer . In case only one side oxide layer is required , we can remove back oxide and offer one side thermal oxide wafer for you .


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