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SOI Wafer |
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SOI Wafer |
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SOI Wafer |
High-speed ICs | High-temperature ICs |
Low-power ICs | Low-voltage ICs |
Microwave components | Power device |
MEMS | Semiconductor |
Method | Fusion bonding |
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Diameter | Ø 4"/ Ø 6" / Ø 8" |
Device thickness | 2 um ~ 300 um |
Tolerance | +/- 0.5 um ~ 2 um |
Orientation | <100> / <111> / <110> or others |
Conductivity | P - type / N - type / Intrinsic |
Dopant | Boron / Phosphorous / Antimony / Arsenic |
Resistivity | 0.001 ~ 100000 ohm-cm |
Oxide thickness | 500A ~ 4 um |
Tolerance | +/- 5% |
Handle wafer | >= 300 um |
Surface | Double sides polished |
Coating | Oxide and nitride can be supplied on both sides of SOI wafer |
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