SOI Wafer




SOI Wafer




SOI Wafer




SOI Wafer






SINCE 2002

Research & Innovation


Semiconductor Wafer Inc ( SWI ) provides high quality SOI wafer ( Silicon-on-Insulator ) for a varity of application including MEMS , Power device , Pressure sensors and CMOS integrated circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer ( active layer ) on top , a buried oxide layer ( insulating SiO2 layer ) in the middle , and a handle wafer ( bulk silicon ) in the bottom . SOI wafers are produced by using SIMOX and wafer bonding technology to achieve thinner and precise device layer and ensure the requirement of thickness uniformity and low defect density . SWI can provide SOI wafer in diameter 4" and 8 " with flexible thickness and wide resistivity range to meet your unique SOI requirements . Contact us for further SOI product informations .







SOI Wafer Application


High-speed ICs High-temperature ICs
Low-power ICs Low-voltage ICs
Microwave components Power device
MEMS Semiconductor

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Product Specification


Method Fusion bonding
Diameter Ø 4"/ Ø 6" / Ø 8"
Device thickness 2 um ~ 300 um
Tolerance +/- 0.5 um ~ 2 um
Orientation <100> / <111> / <110> or others
Conductivity P - type / N - type / Intrinsic
Dopant Boron / Phosphorous / Antimony / Arsenic
Resistivity 0.001 ~ 100000 ohm-cm
Oxide thickness 500A ~ 4 um
Tolerance +/- 5%
Handle wafer >= 300 um
Surface Double sides polished
Coating Oxide and nitride can be supplied on both sides of SOI wafer

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