SiC Wafer




SiC Wafer




SiC Wafer




SiC Wafer






SINCE 2002

Research & Innovation


Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .







SiC Wafer Application


High frequency device   High temperature device
High power device Optoelectronic device
GaN epitaxy device Light emitting diode

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SiC Wafer Properties


Polytype 6H-SiC 4H-SiC                            
Crystal stacking sequence ABCABC ABCB
Lattice parameter a=3.073A , c=15.117A a=3.076A , c=10.053A
Band-gap 3.02 eV 3.27 eV
Dielectric constant 9.66 9.6
Refraction Index n0 =2.707 , ne =2.755 n0 =2.719 ne =2.777

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Product Specification


Polytype 4H / 6H                                                                                
Diameter Ø 2" / Ø 3" / Ø 4"
Thickness 330 um ~ 350 um
Orientation On axis <0001> / Off axis <0001> off 4°
Conductivity N - type / Semi-insulating
Dopant N2 ( Nitrogen ) / V ( Vanadium )
Resistivity  ( 4H-N ) 0.015 ~ 0.03 ohm-cm
Resistivity  ( 6H-N ) 0.02 ~ 0.1 ohm-cm
Resistivity  ( SI ) > 1E5 ohm-cm
Surface CMP polished
TTV <= 15 um
Bow / Warp <= 25 um
Grade Production grade / Research grade

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