Quartz Wafer




Quartz Wafer




Quartz Wafer




Quartz Wafer






SINCE 2002

Research & Innovation


Semiconductor Wafer Inc. provides high quality clear quartz substrate , including fused silica wafer and fused quartz wafer in UV grade , optical grade and semiconductor grade . Quartz wafer have many unique features such as high working temperature , high anti corrosion , good thermal conductivity , high optical transmittance and low dielectric loss , these special features make quartz wafer suitable for semiconductor , photomask , microwave filter , optical lense , and optical fiber application . Quartz wafer can be fabricated in round or square shape , with a SEMI flat or without flat , one side polished or two sides polished , size from 1" to 12 " , thickness range from 0.4 , 0.5 , 0.7 , 1.1 to 3 mm , ultrasonic cleaning and cleanroom compatible wafer cassette package are also available. Additionally , we offer custom specifications designed to your unique needs including , dimension , SEMI. standard flats , surface roughness , edge profile , thickness , flatness , surface quality , cleanliness package method . We have amorphous quartz wafer in stock and can machine to your specification with high precision surface finish . Please contact us for further product information .







Quartz Wafer Feature


High working temperature         High optical transmission   
High stability High anti corrosion
Good thermal conductivity low dielectric loss
Stable dielectric constant Superior mechanical properties

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What's differences ?


Fused silica wafer                                  
( Synthetic silica )
Fused quartz wafer
( Natual silica )                                          
High OH content >1200 Low OH content > 150
Higher transmission in the UV range Lower transmission in the UV range
Free bubbles and inclusions Contain bubbles and inclusions
Very low fluorescence High fluorescence
Impurity 5 ppm Impurity 20 ~ 40 ppm

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Quartz Wafer Properties


Chemical formula SiO2                                                                                                                                
Mechanical Properties  
Density 2.2 g / cm3
Poisson's ratio 0.14 ~ 0.17
Young's modulus 72000 Mpa
Rigidity modulus 31000 Mpa
Moh's hardness 5.5 ~ 6.5
Thermal Properties  
Transformation point 1120 °C
Softening point 1680 °C
Specific heat ( 20 ~ 350 °C ) 670 J / kg °C
Thermal conductivity ( 20 °C ) 1.4 W / m °C
Thermal expansion coefficient 5.5×10 -7 cm / cm °C
Electrical Properties  
Resistivity 7E7 ohm-cm
Insulating strength 250 ~ 400 Kv / cm
Dielectric constant e 3.7~ 3.9
Dielectric absorption coefficient. < 4E4
Dielectric waste coefficient. < 1E4
Optical Properties  
Refractive index ( @ 589 nm ) Nd =1.4584

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Product Specification


Growth                 CVD / Oxy-Hydrogen melting / electric melting
Diameter Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6" / Ø 8"/ Ø 12"
Size 10 x 10 / 20 x 20 / 50 x 50 / 100 x 100 / 200 x 200 mm
Thickness 0.4 mm / 0.5 mm  / 0.7 mm / 1 mm
Surface one side polished / two sides polished
Flat SEMI.Std. flat or Notch
TTV <= 15 um
Roughness Ra <= 10 A
Package Ampak cassette / jar

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