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Quartz Wafer |
![]() |
Quartz Wafer |
![]() |
Quartz Wafer |
High working temperature | High optical transmission |
High stability | High anti corrosion |
Good thermal conductivity | low dielectric loss |
Stable dielectric constant | Superior mechanical properties |
Fused silica wafer ( Synthetic silica ) |
Fused quartz wafer ( Natual silica ) |
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High OH content >1200 | Low OH content > 150 |
Higher transmission in the UV range | Lower transmission in the UV range |
Free bubbles and inclusions | Contain bubbles and inclusions |
Very low fluorescence | High fluorescence |
Impurity 5 ppm | Impurity 20 ~ 40 ppm |
Chemical formula | SiO2 |
Mechanical Properties | |
Density | 2.2 g / cm3 |
Poisson's ratio | 0.14 ~ 0.17 |
Young's modulus | 72000 Mpa |
Rigidity modulus | 31000 Mpa |
Moh's hardness | 5.5 ~ 6.5 |
Thermal Properties | |
Transformation point | 1120 °C |
Softening point | 1680 °C |
Specific heat ( 20 ~ 350 °C ) | 670 J / kg °C |
Thermal conductivity ( 20 °C ) | 1.4 W / m °C |
Thermal expansion coefficient | 5.5×10 -7 cm / cm °C |
Electrical Properties | |
Resistivity | 7E7 ohm-cm |
Insulating strength | 250 ~ 400 Kv / cm |
Dielectric constant e | 3.7~ 3.9 |
Dielectric absorption coefficient. | < 4E4 |
Dielectric waste coefficient. | < 1E4 |
Optical Properties | |
Refractive index ( @ 589 nm ) | Nd =1.4584 |
Growth | CVD / Oxy-Hydrogen melting / electric melting |
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Diameter | Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6" / Ø 8"/ Ø 12" |
Size | 10 x 10 / 20 x 20 / 50 x 50 / 100 x 100 / 200 x 200 mm |
Thickness | 0.4 mm / 0.5 mm / 0.7 mm / 1 mm |
Surface | one side polished / two sides polished |
Flat | SEMI.Std. flat or Notch |
TTV | <= 15 um |
Roughness | Ra <= 10 A |
Package | Ampak cassette / jar |
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