SOI Wafer



Semiconductor Wafer Inc ( SWI ) provides high quality SOI wafer ( Silicon-on-Insulator ) for a varity of application including MEMS , Power device , Pressure sensors and CMOS integrated circuit fabrication .

SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer ( active layer ) on top , a buried oxide layer ( insulating SiO2 layer ) in the middle , and a handle wafer ( bulk silicon ) in the bottom . SOI wafers are produced by using SIMOX and wafer bonding technology to achieve thinner and precise device layer and ensure the requirement of thickness uniformity and low defect density .

SWI can provide SOI wafer in diameter 4" and 8 " with flexible thickness and wide resistivity range to meet your unique SOI requirements .

Contact us for further SOI product informations .


SOI Wafer Advantages :
Ultraflat SOI wafer  
Low stress SOI wafer
Small quantity available   
Customized layer doping and thickness
Fast turn around

SOI Wafer Applications :
High-speed / High-temperature ICs 
Low-power / Low-voltage ICs  
Microwave components 
Power device  
MEMS  

Standard Specifications
Diameter
Ø 4" / 6" / 8"
Device layer
2 um ~ 300 um
Thickness tolerance
+/-0.5 um ~ +/-2 um
Conductivity type
P - type or N - type
Orientation
<100> , <111> , <110>
Resistivity range
0.001 ~ 10000 ohm-cm
Buried oxide layer
500A ~ 4 um
Thickness tolerance
+/-5 %
Handle wafer
>= 300 um
Surface finish
Polished

 

         
         
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