SiC Wafer



Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry .

SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs  wafer , SiC wafer is more suitable for high temperature and high power device application .

SiC wafer can be supplied in diameter 2 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available .

Please contact us for more product information .



SiC Wafer Features SiC Wafer Applications
Low lattice mismatch
High thermal conductivity
Low power consumption
Excellent transient characteristics
High band gap
GaN epitaxy device
Optoelectronic device
High frequency device
High power device
High temperature device
Light emitting diodes
SiC Wafer Properties
Properties
6H-SiC
4H-SiC
Crystal stacking sequence
ABCABC
ABCB
Lattice parameter a=3.073A
c=15.117A
a=3.076A
c=10.053A
Band-gap 3.02 eV 3.27 eV
Dielectric constant
9.66
9.6
Refraction Index n0 =2.707
ne =2.755
n0 =2.719
ne =2.777
Standard Specifications
Polytype
6H-SiC
6H-SiC
4H-SiC
Orientation
<0001>
<0001>
<0001>
Conductivity Type
N - type
Semi-insulating
N - type
Dopant
N2 ( Nitrogen )
V
N2 ( Nitrogen )
Diameter
Ø 2"
Ø 2"
Ø 2"
Thickness
330 um
330 um
330 um

Resistivity ohm-cm

0.02 ~ 0.1
>= 1E5
0.012 ~ 0.03
Surface finish
Si face polished
Si face polished
Si face polished
TTV
<=25 um
<=25 um
<=25 um
Micropipe Density
<= 30 cm -2
<= 30 cm -2
<= 30 cm -2

 

         
         
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