Thermal Oxide Wafer



Thermal oxide or silicon dioxide layer is formed on bare silicon surface at elevated temperature in the presence of an oxidant , the process is called thermal oxidation. Thermal oxide is normally grown in a horizontal tube furnace , at temperature range from 900°C ~ 1200°C , using either a "Wet" or "Dry" growth method .

Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator . In most silicon- based devices, thermal oxide layer play an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics .

SWI provides thermal oxide wafer in diameter from 2" to 12 " , we always choose prime grade and defect free silicon wafer as substrate for growing high  uniformity thermal oxide layer to meet your specific requirements .

Contact us for further information on price & delivery time . 
 
   
Thermal oxide thickness
Applications
100 A
150 ~ 500 A
200 ~ 500 A
2000 ~ 5000 A
3000 ~ 10000 A
Tunneling Gates
Gate Oxides
LOCOS Pad Oxide
Masking Oxides
Field Oxides
Standard Specifications
Wafer size Ø 2" / 3" / 4" / 6" / 8"/ 12"
Thickness range 100 Å ~ 6 µm
Thickness tolerance +/- 5 %
Growth method Wet oxide or Dry oxide method
Tool Horizontal tube furnace
Gases Hydrogen and Oxygen gases
Temperature 900 C ° - 1200 C °
Refractive index 1.456

 

         
         
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