GaSb Wafer



Semiconductor Wafer, Inc. ( SWI ) provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch .

GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or  MOCVD epitaxial growth . 

We have "epi ready " GaSb products with wide choice in exact or off orientation , low or high doped concentration and good surface finish . Please contact us for more product information . 

 

Electrical and Doping Specification
Dopant available
Te / Zn / Undoped
Type of conductivity
N / P
Concentration ( cm -3 )
1E17 - 5E18
Mobility ( cm 2 / v.s. ) 
200 - 3500
Standard Specifications
Growth method
LEC
Diameter
Ø 1" / 2"
Thickness
500 +/-25 um
Conductivity
Semi-conducting
Orientation
<100> , <111> , <110>
Off orientation
From 2° to 10° off
Flat options
EJ or US SEMI. Std .
Surface finish
One side or two sides polished
EPD ( cm-2)
< 1000 or < 10000
Grade
Epi polished grade , mechanical grade
Package method
Single wafer container

 

         
         
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