Ceramic Wafer



Semiconductor Wafer Inc. ( SWI ) provides electronic ceramic substrates , including Al2O3 ( Alumina substrate ) , AlN ( Aluminum Nitride substrate ) and ZrO2 (Zirconia substrate ) .

These ceramic substrate have good mechanical strength and abrasion resistance, high thermal conductivity , very stable in high temperature and corrosive chemical and excellent electrical insulation.

SWI provides ceramic substrates for a wide range of applications, including thin film and thick film microelectronic , high power and high frequency circuit RF / microwave components and capacitor or resistor , contact us for more ceramic wafer product information .



Alumina ( Al2O3 substrate )
Al2O3 substrate is the most popular ceramic substrate, with excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of alumina substrate is quite smooth and low porosity , 99.6% alumina substrate is suitable for thin film device , 96% alumina substrate is suitable for thick film device application.

Aluminium Nitride ( AlN substrate )
Aluminium Nitride has higher thermal conductivity , compared to alumina substrate , It is about 7 to 8 times high . AlN substrate is an excellent electronic package material .


Zirconia ( ZrO2 substrate )
Compared to alumina substrate , ZrO2 substrate has higher mechanical strength and fracture toughness , it's about three times higher for bending strength, two times for fracture toughness than alumina substrate . ZrO2 substrate ( zirconia ) also provides good abrasion resistance. It features a thermal expansion rate close to metals .

Standard Specification
Round shape
Ø 1" / 2" / 3" / 4"
Square shape
10 x 10 / 25 x 25 / 50 x 50 / 100 x 100 mm
Thickness
0.4 / 0.5 / 1 / 2 mm
Surface finish
as fired
one side polished / two sides polished
Surface roughness
Ra < 0.3 um
Ceramic Substrates
Materials
Al2O3
AlN
ZrO2
96%
99.6%
Color
White
White
Gray
White
Density (g/cm 3 )
3.72
3.85
3.3
6.04
Thermal conductivity
(W/m. K)
22.3
29.5
160 -190
2.4
Thermal Expansion
(x10 -6 / o C)
8.0
8.2
4.6
10
Dielectric strength
14E6
18E6
14E6
Dielectric Constant
(at 1MHZ)
9.5
9.8
8.7
29
Loss Tangent
(x10 -4 @1MHZ)
3
2
5
1E-3
Volume Resistivity
(ohm-m)
>10 14
>10 14
>10 14
Flexural Strength
(N/mm 2 )
350
500
450

 

         
         
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