GaP Wafer
 


Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal GaP wafer ( Gallium phosphide ) to electronic and optoelectronic industry in diameter up to 2 inch .

Gallium phosphide ( GaP ) crystal is an orange-yellow semi-translucent material formed by two elements , Gallium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method .

GaP wafer is an important semiconductor material which have unique electrical properties as other III-V compound materials and is widely used as red , yellow , and green LED ( light-emitting diodes ) .

We have as-cut single crystal GaP wafer for your LPE application , and also provide epi ready grade GaP wafer for your MOCVD & MBE epitaxial application .

Please contact us for more product information .


GaP Wafer Properties
Growth method LEC
Crystal structure Cubic
Lattice constant a=5.45 A
Density 4.16 g / cm3
Melting point 1480 °C
Energy gap 2.4 e.v
Refractive index 3.37
Thermal expansion 5.3 x10-6 / °C
Electrical and Doping Specification
Dopant available
S / Zn / Cr / Undoped
Type of conductivity
N / P
Concentration ( cm -3 )
1E17 - 2E18
Mobility ( cm2 / v.s. ) 
> 100
Specification
Growth method
LEC
Diameter ( mm )
Ø 2"
Thickness ( um )
400 +/-25 um
Conductivity type
Semi-conducting
Orientation
<100> , <111> , <110>
Off orientation
From 2° to 10° off
Flat options
EJ or US SEMI. Std .
Surface finish
One side or two sides polished
EPD ( cm-2)
< 2E5
Grade
Epi polished grade
Package method
Single wafer container

 

         
         
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