III-V Compound Wafer



Semiconductor Wafer, Inc ( SWI ) provides III-V compound semiconductor wafer to micro-electronics ( HEMT / HBT ) and opto-electronics industry ( LD / LED / PIN ) .

III- V compound wafer are compounds formed by elements from 3 & 5 group of the  periodic table . Due to its unique electronic and thermal properties , III-V group wafer is a next - generation substrate suitable for MBE and MOCVD epitaxial growth application .

We have complete product line and can offer you a wide range of products with quick delivery time and competitive price , please contact us for more product information .


Specification
Wafer
Diameter
Ø2"- 4"
Ø 2"
Ø 2"
Ø 2"
Ø2"-3"
Thickness
350
400
500
500
500
Conductivity
Semi-conducting or Semi-insulating
Type
P - type or N - type
Dopant
Silicon , Sulphure , Tellurium , Zinc , Undoped
Orientation
<100> , <111> , <110>
Off orientation
From 2° to 10° off
Surface finish
one side or two sides polished
Grade
Epi polished grade , mechanical grade
Package
Single wafer container with outer foil bag
1. Semi-insulating or Semi-conducting .  
2. High uniformity of electrical parameters .
3. Excellent surface quality for epitaxial growth . 
4. Non-standard specifications are available upon request .

 

         
         
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