Semiconductor Wafer, Inc. ( SWI ) provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 2 inch .
InAs crystal is a compound formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth .
We have "epi ready " InAs products with wide choice in exact or off orientation , low or high doped concentration and surface finish . Please contact us for more product information .