InAs Wafer



Semiconductor Wafer, Inc. ( SWI ) provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 2 inch .

InAs crystal is a compound  formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . 

We have "epi ready " InAs products with wide  choice in exact or off orientation , low or high doped concentration and surface finish . Please contact us for more product information .

 
  
Electrical and Doping Specification
Dopant available
S / Zn / Undoped
Type of conductivity
N / P
Concentration ( cm -3 )
1E17 - 5E18
Mobility ( cm2 / v.s. ) 
100 -25000
Specification
Growth method
LEC
Diameter ( mm )
Ø 1" / 2"
Thickness ( um )
500 +/-25 um
Conductivity type
Semi-conducting
Orientation
<100> , <111> , <110>
Off orientation
From 2° to 10° off
Flat options
EJ or US SEMI. Std .
Surface finish
One side or two sides polished
EPD ( cm-2)
< 15000 or < 50000
Grade
Epi polished grade
Package method
Single wafer container

 

         
         
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