InP Wafer




InP Wafer




InP Wafer




InP Wafer






SINCE 2002

Research & Innovation


Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal InP wafer ( Indium phosphide ) to micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 3 inch . Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer is an important semiconductor material which have superior electrical and thermal properties , compared to silicon wafer and GaAs wafer , InP wafer has higher electron mobility ,higher frequency , low power consumption , higher thermal conductivity and low noise performance . We can provide epi ready grade InP wafer for your MOCVD & MBE epitaxial application .Please contact us for more product information .







Electrical and Doping Specification


Dopant available S / Zn / Fe / Undoped                                                            
Type of conductivity N / P ,Semi-conducting / Semi-insulating
Concentration 1E6 - 8E18 cm-3
Mobility >1000 cm2 / v.s.

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Product Specification


Growth LEC /  VGF                                                  
Diameter Ø 2" / Ø 3" / Ø 4"
Thickness 350 um ~ 625 um
Orientation <100> / <111> / <110> or others
Off orientation Off 2° to 10°
Surface One side polished or two sides polished
Flat options EJ or SEMI. Std .
TTV <= 10 um
Bow / Warp <= 20 um
Grade Epi polished grade / mechanical grade
Package Single wafer container

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