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InP Wafer |
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InP Wafer |
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InP Wafer |
Dopant available | S / Zn / Fe / Undoped |
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Type of conductivity | N / P ,Semi-conducting / Semi-insulating |
Concentration | 1E6 - 8E18 cm-3 |
Mobility | >1000 cm2 / v.s. |
Growth | LEC / VGF |
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Diameter | Ø 2" / Ø 3" / Ø 4" |
Thickness | 350 um ~ 625 um |
Orientation | <100> / <111> / <110> or others |
Off orientation | Off 2° to 10° |
Surface | One side polished or two sides polished |
Flat options | EJ or SEMI. Std . |
TTV | <= 10 um |
Bow / Warp | <= 20 um |
Grade | Epi polished grade / mechanical grade |
Package | Single wafer container |
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