InP Based Epi Wafer




InP Based Epi Wafer




InP Based Epi Wafer




InP Based Epi Wafer






SINCE 2002

Research & Innovation


Semiconductor Wafer Inc. ( SWI ) provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your InP epi layer structure . Please contact us for more product information or discuss your epi layer structure .







Application


Laser Diodes VCSEL                          
LED QWIP
Microwave Components HEMT
Photo Detector Waveguides

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InP Based Epitaxial Wafer


InP epi layer on InP substrate InGaAs epi layer on InP substrate
InGaAsP epi layer on InP substrate InAlAs epi layer on InP substrate
InGaAs / InGaAsP epi layer on InP substrate InP / InAlAs epi layer on InP substrate

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Epi Layer Structure ( HEMT / HBT )


Growth MOCVD                                                  
Dopant source P type / Be , N type / Si
Cap layer i-InP layer                                                  
Active layer n-InGaAs layer
Space layer i-InGaAsP layer
Buffer layer i-InP layer
Substrate Ø 2" /  Ø 3" / Ø 4" InP wafer

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