InP Based Epi Wafer Capability
Our reactors are configured for a variety of material systems and process conditions. We can provide custom epitaxy for a variety of device applications ranging from LEDs to HEMTs.
| Material
Capability
|
Substrate
|
Wafer
Size
|
| InP/InP |
InP wafer |
Up to 4 inch |
| InAlAs/InP |
InP waferr |
Up to 4 inch |
| InGaAs/InP |
InP wafer |
Up to 4 inch |
| InGaAsP/InP |
InP wafer |
Up to 4 inch |
| InGaAs/InGaAsP/InP |
InP wafer |
Up to 4 inch |
| InP/InAlAs/InP |
InP wafer |
Up to 4 inch |
Optoelectronic applications:
Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides
Electronic applications:
FETs, HBTs, HEMTs, diodes, Microwave devices.
