GaSb Wafer




GaSb Wafer




GaSb Wafer




GaSb Wafer






SINCE 2002

Research & Innovation


Semiconductor Wafer, Inc. ( SWI ) provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " GaSb products with wide choice in exact or off orientation , low or high doped concentration and good surface finish . Please contact us for more product information .







Electrical and Doping Specification


Dopant available Te / Zn / Undoped                                                                
Type of conductivity N / P ,Semi-conducting / Semi-insulating
Concentration 1E17 - 5E18 cm-3
Mobility 200 ~ 3500 cm2 / v.s.

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Product Specification


Growth LEC                                                          
Diameter Ø 2" / Ø 3"
Thickness 500 um ~ 625 um
Orientation <100> / <111> / <110> or others
Off orientation Off 2° to 10°
Surface One side polished or two sides polished
Flat options EJ or SEMI. Std .
TTV <= 10 um
EPD <= 1000 cm-2
Grade Epi polished grade / mechanical grade
Package Single wafer container

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