GaN Epi Wafer




GaN Epi Wafer




GaN Epi Wafer




GaN Epi Wafer






SINCE 2002

Research & Innovation


Semiconductor Wafer Inc. ( SWI ) provides GaN epitaxial wafer to microelectronics and optoelectronics industry in diameter 2" to 4". GaN epitaxial wafers are grown by HVPE or MOCVD method , can be used as an ideal and excellent substrate for high frequency , high speed and high power device . Currently we can offer GaN epitaxial wafer for fundamental research and device product development use, including GaN template , AlGaN and InGaN . Besides standard GaN based wafer , we can also work with our clients to discuss and design specific epi layer structures . Please contact us for more product information or discuss your epi layer structure .







Application


For GaN epitaxial growth for III-V nitride epitaxial  
Blue / Green / White LED UV LED                   

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P-GaN on Sapphire


Growth MOCVD / HVPE                                          
Conductivity P type
Dopant Mg                                                
Concentration > 5E17 cm-3
Thickness 1 ~ 5 um
Resistivity < 0.5  ohm-cm
Substrate Ø 2" / Ø 3" / Ø 4" Sapphire wafer

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N-GaN on Sapphire


Growth MOCVD / HVPE                                          
Conductivity N+  type
Dopant Si                                                
Concentration > 1E18 cm-3
Thickness 500 nm ~ 100 um
Resistivity < 0.05  ohm-cm
Substrate Ø 2" / Ø 3" / Ø 4" Sapphire wafer

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i-GaN on Sapphire


Growth MOCVD / HVPE                                          
Conductivity N-  type
Dopant Undoped                                              
Concentration > 5E17 cm-3
Thickness 500 nm ~ 100 um
Resistivity < 5  ohm-cm
Substrate Ø 2" / Ø 3" / Ø 4" Sapphire wafer

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