GaAs Based Epi Wafer




GaAs Based Epi Wafer




GaAs Based Epi Wafer




GaAs Based Epi Wafer






SINCE 2002

Research & Innovation


Semiconductor Wafer Inc. ( SWI ) provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( LT-GaAs , AlAs ) or ternary alloy ( AlGaAs , InGaAs ,GaAsP , InGaP ) on GaAs substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your GaAs epi layer structure . Please contact us for more product information or discuss your epi layer structure .







GaAs Based Epi Wafer
III-V Epitaxial Wafer
MOCVD Technique

GaAs Based Epi Wafer Capability

Our reactors are configured for a variety of material systems and process conditions. We can provide custom epitaxy for a variety of device applications ranging from LEDs to HEMTs.


Material
Capability
Substrate Wafer
Size
GaAs/GaAs GaAs wafer Up to 4 inch
LT-GaAs/GaAs GaAs wafer Up to 4 inch
AlAs/GaAs GaAs wafer Up to 4 inch
InAs/GaAs GaAs wafer Up to 4 inch
AlGaAs/GaAs GaAs wafer Up to 4 inch
InGaAs/GaAs GaAs wafer Up to 4 inch
InGaP/GaAs GaAs wafer Up to 4 inch
GaAsP/GaAs GaAs wafer Up to 4 inch

Optoelectronic applications:

Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides.

Electronic applications:

FETs, HBTs, HEMTs, diodes, Microwave devices.






Epi Layer Structure ( HEMT / HBT )


Growth MOCVD                                                  
Dopant source P type / Be , N type / Si
Cap layer i-GaAs layer                                                  
Active layer n-AlGaAs layer
Space layer i-AlGaAs layer
Buffer layer i-GaAs layer
Substrate Ø 3" / Ø 4" GaAs wafer

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