GaAs Based Epi Wafer




GaAs Based Epi Wafer




GaAs Based Epi Wafer




GaAs Based Epi Wafer






SINCE 2002

Research & Innovation


Semiconductor Wafer Inc. ( SWI ) provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( LT-GaAs , AlAs ) or ternary alloy ( AlGaAs , InGaAs ,GaAsP , InGaP ) on GaAs substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your GaAs epi layer structure . Please contact us for more product information or discuss your epi layer structure .







Application


Laser Diodes VCSEL                          
LED QWIP
Microwave Components HEMT
Photo Detector Waveguides

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GaAs Based Epitaxial Wafer


GaAs epi layer on GaAs substrate AlAs epi layer on GaAs substrate
LT-GaAs epi layer on GaAs substrate InAs epi layer on GaAs substrate
InGaAs epi layer on GaAs substrate GaAsP epi layer on GaAs substrate
AlGaAs epi layer on GaAs substrate InGaP epi layer on GaAs substrate

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Epi Layer Structure ( HEMT / HBT )


Growth MOCVD                                                  
Dopant source P type / Be , N type / Si
Cap layer i-GaAs layer                                                  
Active layer n-AlGaAs layer
Space layer i-AlGaAs layer
Buffer layer i-GaAs layer
Substrate Ø 3" / Ø 4" GaAs wafer

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